• describe the motion of carriers in a semiconductor material
• illustrate the operational principles of some common electronic devices including PN Junction Diode, Schottky Diode, Photo Diodes, Solar Cells, LED, and Bipolar Junction Transistor
• identify the most important parameters to adjust for meeting certain design specifications
• construct the circuit models of some common electronic devices
• communication in the language of semiconductor

Week 1: Intrinsic semiconductor materials
Introduction to the energy band diagram of a crystal and calculating the carrier concentration in the material.

Week 2: Doping and PN junction formation
The effect of doping and the formation of PN junctions.

Week 3: Current-voltage characteristics of PN junction diodes
Current-voltage characteristics and detailed carrier actions in a PN junction diode.

Week 4: Real PN junction characteristics, its model and design
The characteristics of real PN junction diodes, the charge and capacitance models, and the design strategy.

Week 5: PN junction optical properties and metal-semiconductor contacts
The optical responses of the PN junction; the working principles of optical detection, solar cells and LEDs; and the metal-semiconductor contacts.

Week 6: Basic operation of Bipolar Junction Transistor
Introduction to bipolar junction transistors, I-V characteristic and non-ideal effects.

Week 7: Real Bipolar Junction Transistor structures, switching characteristics and model
Switching characteristics of the Bipolar Junction Transistor, it circuit model and design strategy.

Week 8: Final Exam